Design of a novel micro-laser formed by monolithic integration of a III-V pillar with a silicon photonic crystal cavity

A novel micro-laser configuration formed by integrating an InGaAs/InP pillar with a silicon photonic crystal cavity is proposed and analyzed in detail. Special attention is paid to designing the cavity such that it can accommodate large-size pillars without performance compromise. The Purcell effect is studied and predicted to be significant because of the close interaction between the cavity modes and the gain medium. An overall quality factor as high as 1 x 10(5) and a spontaneous emission factor close to unity are predicted. Possible limiting factors for laser performance, such as surface non-radiative recombination and the thermal dissipation properties are analyzed, and it is found that the proposed laser design is very robust. This comprehensive analysis suggests that the proposed micro-laser is a promising candidate for large-scale integration of micro-lasers on silicon for low power consumption applications, such as intra-chip optical communications

Room temperature InGaAs/InP distributed feedback laser directly grown on silicon

We report an optically pumped room-temperature O-band DFB laser, based on the buffer-less epitaxial growth of high quality InGaAs/InP waveguides directly on silicon wafer

Deformation and Failure Characteristics of the Rock Masses around Deep Underground Caverns

The deformation and failure characteristics of deep rock masses are the focus of this study on deep rock mass engineering. The study identifies the deformation and failure characteristics of a deep cavern under different ground stress conditions using model test and theoretical analysis methods. First, the similarity theory for model tests is introduced, and then the scale factors used in the present study are calculated according to the Froude criterion. Based on the study objectives, the details of the study methods (the similarity coefficient, the loading conditions, the test steps, etc.) are introduced. Finally, the failure characteristics of the deep cavern and the strain distribution characteristics surrounding the caverns under different ground stress conditions are identified using the model test. It was found that compared with shallow rock masses the rock masses of the deep cavern have a much greater tensile range, which reaches 1.5 times the diameter of the cavern under the conditions established in the present study. Under different ground stress conditions, there are differences in failure characteristics and the reasons of the differences were analyzed. The implication of the test results on the design of support system for deep caverns was presented

Monolithic integrated InP distributed bragg reflector (DBR) lasers on (001) silicon

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Room Temperature InP DFB Laser Array Directly Grown on (001) Silicon

Fully exploiting the silicon photonics platform requires a fundamentally new approach to realize high-performance laser sources that can be integrated directly using wafer-scale fabrication methods. Direct band gap III-V semiconductors allow efficient light generation but the large mismatch in lattice constant, thermal expansion and crystal polarity makes their epitaxial growth directly on silicon extremely complex. Here, using a selective area growth technique in confined regions, we surpass this fundamental limit and demonstrate an optically pumped InP-based distributed feedback (DFB) laser array grown on (001)-Silicon operating at room temperature and suitable for wavelength-division-multiplexing applications. The novel epitaxial technology suppresses threading dislocations and anti-phase boundaries to a less than 20nm thick layer not affecting the device performance. Using an in-plane laser cavity defined by standard top-down lithographic patterning together with a high yield and high uniformity provides scalability and a straightforward path towards cost-effective co-integration with photonic circuits and III-V FINFET logic

Photoluminescence characterization of III-V materials epitaxially grown on silicon

status: publishe

DCP-Net: A Distributed Collaborative Perception Network for Remote Sensing Semantic Segmentation

Onboard intelligent processing is widely applied in emergency tasks in the field of remote sensing. However, it is predominantly confined to an individual platform with a limited observation range as well as susceptibility to interference, resulting in limited accuracy. Considering the current state of multi-platform collaborative observation, this article innovatively presents a distributed collaborative perception network called DCP-Net. Firstly, the proposed DCP-Net helps members to enhance perception performance by integrating features from other platforms. Secondly, a self-mutual information match module is proposed to identify collaboration opportunities and select suitable partners, prioritizing critical collaborative features and reducing redundant transmission cost. Thirdly, a related feature fusion module is designed to address the misalignment between local and collaborative features, improving the quality of fused features for the downstream task. We conduct extensive experiments and visualization analyses using three semantic segmentation datasets, including Potsdam, iSAID and DFC23. The results demonstrate that DCP-Net outperforms the existing methods comprehensively, improving mIoU by 2.61%~16.89% at the highest collaboration efficiency, which promotes the performance to a state-of-the-art level

III-V-on-silicon photonic integrated circuits for communication and sensing applications

We review the integration of III-V semiconductors on silicon photonic integrated circuits as a way of realizing fully integrated silicon photonic transceivers and short-wave infrared spectroscopic sensors